SIC Integrated Circuit Chip SCT040W120G3AG Silicon Carbide HiP247 Wide Bandgap Transistors
Product Description Of SCT040W120G3AG
SCT040W120G3AG silicon carbide Power MOSFET device. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
Specification Of SCT040W120G3AG
| Part Number: | SCT040W120G3AG | FET Type: | N-Channel |
| Drain To Source Voltage (Vdss): | 1200 V | Current - Continuous Drain (Id) @ 25°C: | 40A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 18V | Rds On (Max) @ Id, Vgs: | 54mOhm @ 16A, 18V |
Package Outline Of SCT040W120G3AG
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| IRFU9N20 | TO-251 |
| IRFZ44 | TO-263 |
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| IRG4BC20 | TO-220 |
| IRG4BC30 | TO-220 |
| IRG4IBC10 | TO-220F |
FAQ
Q: Are your products original?
A: Yes, all products are original, new original import is our purpose.
Q: Which Certificates do you have?
A: We are ISO 9001:2015 Certified Company and member of ERAI.
Q: Can you support small quantity order or sample?Is the sample free?
A: Yes,we support sample order and small order.Sample cost is different according to your order or project.
Q: How to ship my order? Is it safe?
A: We use express to ship,such as DHL,Fedex,UPS,TNT,EMS.We can also use your suggested forwarder.Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
Q: What about the lead time?
A: We can ship stock parts within 5 working days.If without stock,we will confirm lead time for you based on your order quantity.
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SIC Integrated Circuit Chip SCT040W120G3AG Silicon Carbide HiP247 Wide Bandgap Transistors Images
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